Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15953521Application Date: 2018-04-16
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Publication No.: US11004756B2Publication Date: 2021-05-11
- Inventor: Kota Ohara , Manabu Matsumoto , Yoshitaka Otsubo
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JPJP2017-197913 20171011
- Main IPC: H01L23/049
- IPC: H01L23/049 ; H01L23/14 ; H01L23/31 ; H01L23/053 ; H01L23/373 ; H01L25/07 ; H01L29/16 ; H01L29/739 ; H01L23/24 ; H01L23/498

Abstract:
A semiconductor device includes: a base plate; a semiconductor chip mounted on the base plate; a case surrounding the semiconductor chip on the base plate; an electrode terminal connected to the semiconductor chip; a sealing material covering an upper face of the base plate, the semiconductor chip and a part of the electrode terminal in the case; and a lid fastened to the case above the sealing material, wherein the electrode terminal is not exposed on an upper face of the sealing material, and there is a gap between the upper face of the sealing material and a lower face of the lid.
Public/Granted literature
- US20190109059A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-04-11
Information query
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