Invention Grant
- Patent Title: Semiconductor device with improved heat dissipation
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Application No.: US16287526Application Date: 2019-02-27
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Publication No.: US11004837B2Publication Date: 2021-05-11
- Inventor: Akiko Fujimaki
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: Toshiba Memory Corporation
- Current Assignee: Toshiba Memory Corporation
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JPJP2018-173003 20180914
- Main IPC: H01L25/18
- IPC: H01L25/18 ; H01L23/552 ; H01L23/498

Abstract:
A semiconductor device includes a substrate, a semiconductor device module, and a heat conductor. The semiconductor device module is on the substrate. The semiconductor device module includes an interposer substrate, one or more semiconductor device chips, a covering resin, and a metal film. The one or more semiconductor device chips are on a first surface of the interposer substrate. The covering resin is in contact with the first surface of the interposer substrate and the one or more semiconductor device chips and encloses the one or more semiconductor device chips. The metal film is in contact with the covering resin and covers the covering resin. The heat conductor is in thermal contact with the substrate and the metal film, and has a higher thermal conductivity than the covering resin.
Public/Granted literature
- US20200091129A1 SEMICONDUCTOR DEVICE WITH IMPROVED HEAT DISSIPATION Public/Granted day:2020-03-19
Information query
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