The present disclosure relates to a solid-state image capture element and an electronic device which are enabled to eliminate asymmetry of a light reception amount in accordance with an incident angle of light incident on a pixel. A solid-state image capture element includes: a pixel including a light-receiving portion that receives light incident from a rear-surface side of a semiconductor substrate; and a wiring layer laminated on a front-surface of the semiconductor substrate. The pixel includes a symmetrical wiring that is formed symmetrically with respect to a center of the pixel in a plane view of the pixel. The symmetrical wiring is arranged in a layer closest to the light-receiving portion, of a plurality of layers of wiring formed in the wiring layer. For example, the present technology can be applied to a rear-surface irradiation type solid-state image capture element.