Invention Grant
- Patent Title: Insulated gate bipolar transistor having first and second field stop zone portions and manufacturing method
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Application No.: US16202567Application Date: 2018-11-28
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Publication No.: US11004963B2Publication Date: 2021-05-11
- Inventor: Oana Julia Spulber , Matthias Kuenle , Wolfgang Roesner , Christian Philipp Sandow , Christoph Weiss
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102017128243.2 20171129
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/66 ; H01L21/265 ; H01L29/06 ; H01L29/10 ; H01L29/32 ; H01L29/36 ; H01L29/40 ; H01L29/08
Abstract:
An embodiment relates to a method of manufacturing an insulated gate bipolar transistor in a semiconductor body. A first field stop zone portion of a first conductivity type is formed on a semiconductor substrate. A second field stop zone portion of the first conductivity type is formed on the first field stop zone portion. A drift zone of the first conductivity type is formed on the second field stop zone portion. A doping concentration in the drift zone is smaller than 1013 cm−3 along a vertical extension of more than 30% of a thickness of the semiconductor body upon completion of the insulated gate bipolar transistor.
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