Invention Grant
- Patent Title: Semiconductor continuous array layer
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Application No.: US16197103Application Date: 2018-11-20
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Publication No.: US11005018B2Publication Date: 2021-05-11
- Inventor: Chen-Fu Chu
- Applicant: Chen-Fu Chu
- Applicant Address: TW Hsinchu
- Assignee: Chen-Fu Chu
- Current Assignee: Chen-Fu Chu
- Current Assignee Address: TW Hsinchu
- Agent Jongkook Park
- Main IPC: H01L33/62
- IPC: H01L33/62 ; H01L27/15 ; H01L33/52 ; H01L25/075 ; H01L25/16 ; H01L33/36 ; H01L33/50 ; H01L33/56 ; H01L21/78 ; H01L21/304 ; H01L33/00 ; H01S5/02232 ; H01S5/022 ; B05C5/02 ; B05C9/12 ; B05C9/14 ; C23C14/14 ; C23C14/34 ; C23C16/455 ; C23C16/50 ; H01L31/16 ; H01L33/32 ; H01L33/44 ; H01L33/58 ; H01L33/60 ; H01L33/64

Abstract:
A semiconductor continuous array layer comprising: an array of multiple semiconductor units; a sidewall of each semiconductor unit is surrounded by a semi-cured material or a cured material connecting the semiconductor units together to form a semiconductor continuous array; wherein multiple voids or air gaps are enclosed by the semi-cured material or the cured material within the semiconductor continuous array or around the edge of the semiconductor continuous array.
Public/Granted literature
- US20190097103A1 SEMICONDUCTOR CONTINUOUS ARRAY LAYER Public/Granted day:2019-03-28
Information query
IPC分类: