- Patent Title: Film bulk acoustic wave resonators and fabrication methods thereof
-
Application No.: US16392847Application Date: 2019-04-24
-
Publication No.: US11005448B2Publication Date: 2021-05-11
- Inventor: Xiaochuan Wang
- Applicant: SHANGHAI JADIC OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Shanghai
- Assignee: SHANGHAI JADIC OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee: SHANGHAI JADIC OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Shanghai
- Agency: Browdy and Neimark, PLLC
- Priority: CN201810379868.5 20180425
- Main IPC: H03H9/17
- IPC: H03H9/17 ; H03H9/54 ; H03H9/02

Abstract:
A film bulk acoustic wave resonator includes a first substrate; a first insulating material layer, formed on the first substrate; a first cavity, formed in the first insulating material layer with an opening facing away from the first substrate; and an acoustic-wave resonant plate, including a first electrode, a piezoelectric oscillation plate, and a second electrode stacked on the first insulating material layer. The piezoelectric oscillation plate is disposed between the first electrode and the first electrode. The first electrode includes a first electrode cavity above the first cavity. The second electrode includes a second cavity above the first cavity. At least a portion of a boundary of the piezoelectric oscillation plate is formed by a boundary of the first electrode cavity and a boundary of the second electrode cavity. The boundary of the piezoelectric oscillation plate has an irregular polygonal shape without having two parallel edges.
Public/Granted literature
- US20190334503A1 FILM BULK ACOUSTIC WAVE RESONATORS AND FABRICATION METHODS THEREOF Public/Granted day:2019-10-31
Information query
IPC分类: