Invention Grant
- Patent Title: Nitride crystal
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Application No.: US16420499Application Date: 2019-05-23
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Publication No.: US11008671B2Publication Date: 2021-05-18
- Inventor: Hajime Fujikura , Taichiro Konno , Takayuki Suzuki , Toshio Kitamura , Tetsuji Fujimoto , Takehiro Yoshida
- Applicant: SCIOCS COMPANY LIMITED , SUMITOMO CHEMICAL COMPANY, LIMITED
- Applicant Address: JP Ibaraki; JP Tokyo
- Assignee: SCIOCS COMPANY LIMITED,SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee: SCIOCS COMPANY LIMITED,SUMITOMO CHEMICAL COMPANY, LIMITED
- Current Assignee Address: JP Ibaraki; JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JPJP2018-142907 20180730
- Main IPC: C30B29/40
- IPC: C30B29/40 ; H01L31/0304
Abstract:
An object of the present invention is to improve quality of a group-III nitride crystal, and also improve performance and manufacturing yield of a semiconductor device manufactured using the crystal.
Provided is a nitride crystal represented by the composition formula of InxAlyGa1-x-yN (satisfying 0≤x≤1, 0≤y≤1, 0≤x+y≤1),
with a hardness exceeding 22.0 GPa as measured by a nanoindentation method using an indenter with a maximum load applied thereto being within a range of 1 mN or more and 50 mN or less.
Provided is a nitride crystal represented by the composition formula of InxAlyGa1-x-yN (satisfying 0≤x≤1, 0≤y≤1, 0≤x+y≤1),
with a hardness exceeding 22.0 GPa as measured by a nanoindentation method using an indenter with a maximum load applied thereto being within a range of 1 mN or more and 50 mN or less.
Public/Granted literature
- US20200032417A1 NITRIDE CRYSTAL Public/Granted day:2020-01-30
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