Invention Grant
- Patent Title: Fingerprint sensor in InFO structure and formation method
-
Application No.: US16511721Application Date: 2019-07-15
-
Publication No.: US11010580B2Publication Date: 2021-05-18
- Inventor: Chih-Hua Chen , Yu-Feng Chen , Chung-Shi Liu , Chen-Hua Yu , Hao-Yi Tsai , Yu-Chih Huang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: G06K9/00
- IPC: G06K9/00 ; H01L21/56

Abstract:
A package includes a sensor die, and an encapsulating material encapsulating the sensor die therein. A top surface of the encapsulating material is substantially coplanar with or higher than a top surface of the sensor die. A plurality of sensing electrodes is higher than the sensor die and the encapsulating material. The plurality of sensing electrodes is arranged as a plurality of rows and columns, and the plurality of sensing electrodes is electrically coupled to the sensor die. A dielectric layer covers the plurality of sensing electrodes.
Public/Granted literature
- US20190340405A1 Fingerprint Sensor in InFO Structure and Formation Method Public/Granted day:2019-11-07
Information query