Invention Grant
- Patent Title: Stiction-free drying process with contaminant removal for high-aspect ratio semiconductor device structures
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Application No.: US16422477Application Date: 2019-05-24
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Publication No.: US11011392B2Publication Date: 2021-05-18
- Inventor: Steven Verhaverbeke , Han-Wen Chen , Roman Gouk
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; B08B3/08 ; B08B7/00 ; H01L21/67 ; H01L21/677

Abstract:
Embodiments of the present disclosure generally relate to a method of cleaning a substrate. More specifically, embodiments of the present disclosure relate to a method of cleaning a substrate in a manner that reduces or eliminates the negative effects of line stiction between semiconductor device features. In an embodiment, a method of cleaning a substrate includes exposing a substrate having high aspect ratio features formed thereon to a first solvent to remove an amount of a residual cleaning solution disposed on a surface of the substrate, exposing the surface of the substrate to a second solvent to remove the first solvent disposed on the surface of the substrate, exposing the surface of the substrate to a supercritical fluid to remove the second solvent disposed on the surface of the substrate, and exposing the surface of the substrate to electromagnetic energy.
Public/Granted literature
Information query
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