A method includes applying a first dielectric material onto a semiconductor substrate to form a first dielectric layer on the semiconductor substrate, creating a plurality of openings in the dielectric layer, depositing a sacrificial material within the openings of the dielectric layer, removing the sacrificial material from at least a first segment of a first trench of the openings, depositing a second dielectric fill material into the first segment of the first trench opening where the sacrificial material was removed, removing the sacrificial material from at least some of the remaining openings and depositing a metallic material within the first trench opening to define at least first and second lines in the first trench and form a metallic interconnect structure.