Invention Grant
- Patent Title: Semiconductor arrangement with capacitor
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Application No.: US16014008Application Date: 2018-06-21
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Publication No.: US11011524B2Publication Date: 2021-05-18
- Inventor: Chern-Yow Hsu , Chen-Jong Wang , Chia-Shiung Tsai , Shih-Chang Liu , Xiaomeng Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee Address: TW Hsin-Chu
- Agency: Cooper Legal Group, LLC
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L49/02 ; H01L21/768

Abstract:
A semiconductor arrangement includes a logic region and a memory region. The memory region has an active region that includes a semiconductor device. The memory region also has a capacitor within one or more dielectric layers over the active region, where the capacitor is over the semiconductor device. The semiconductor arrangement also includes a protective ring within at least one of the logic region or the memory region and that separates the logic region from the memory region. The capacitor has a first electrode, a second electrode and an insulating layer between the first electrode and the second electrode, where the first electrode is substantially larger than other portions of the capacitor.
Public/Granted literature
- US20180315760A1 SEMICONDUCTOR ARRANGEMENT WITH CAPACITOR Public/Granted day:2018-11-01
Information query
IPC分类: