Invention Grant
- Patent Title: Semiconductor component having a SiC semiconductor body and method for producing a semiconductor component
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Application No.: US16590714Application Date: 2019-10-02
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Publication No.: US11011606B2Publication Date: 2021-05-18
- Inventor: Andreas Meiser , Caspar Leendertz , Anton Mauder
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102018124740.0 20181008
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L29/66 ; H01L29/06 ; H01L29/78 ; H01L29/808 ; H01L29/739 ; H01L29/40 ; H01L29/423 ; H01L21/308 ; H01L21/31 ; H01L21/04 ; H01L21/311 ; H01L21/426 ; H01L21/02 ; H01L21/033
Abstract:
A silicon carbide substrate has a trench extending from a main surface of the silicon carbide substrate into the silicon carbide substrate. The trench has a trench width at a trench bottom. A shielding region is formed in the silicon carbide substrate. The shielding region extends along the trench bottom. In at least one doping plane extending approximately parallel to the trench bottom, a dopant concentration in the shielding region over a lateral first width deviates by not more than 10% from a maximum value of the dopant concentration. The first width is less than the trench width and is at least 30% of the trench width.
Information query
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