Invention Grant
- Patent Title: Photodiode and photosensitive device
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Application No.: US16604682Application Date: 2018-09-20
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Publication No.: US11011664B2Publication Date: 2021-05-18
- Inventor: Haruhiko Udono , Toshiaki Asahi
- Applicant: IBARAKI UNIVERSITY , JX NIPPON MINING & METALS CORPORATION
- Applicant Address: JP Mito; JP Tokyo
- Assignee: IBARAKI UNIVERSITY,JX NIPPON MINING & METALS CORPORATION
- Current Assignee: IBARAKI UNIVERSITY,JX NIPPON MINING & METALS CORPORATION
- Current Assignee Address: JP Mito; JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP.
- Priority: JPJP2018-067691 20180330
- International Application: PCT/JP2018/034898 WO 20180920
- International Announcement: WO2019/187222 WO 20191003
- Main IPC: H01L31/103
- IPC: H01L31/103 ; H01L31/0224 ; H01L31/032
Abstract:
Provided is a semiconductor photodiode which has an electrode structure having not only high adhesion to a Mg2Si material but also improved overall performance including photosensitivity. A photodiode comprising: a pn junction of a magnesium silicide crystal; an electrode comprising a material that is in contact with p-type magnesium silicide; and an electrode comprising a material that is in contact with n-type magnesium silicide, wherein the material that is in contact with p-type magnesium silicide is a material which has a work function of 4.81 eV or more and reacts with silicon to form a silicide or form an alloy with magnesium.
Public/Granted literature
- US20200052142A1 PHOTODIODE AND PHOTOSENSITIVE DEVICE Public/Granted day:2020-02-13
Information query
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