A semiconductor device that has a semiconductor-oxide-nitride-oxide-semiconductor (SONOS) based non-volatile memory (NVM) array including NVM cells arranged in rows and columns, in which NVM transistors of the NVM cells are configured to store N×analog values corresponding to the N×levels of their drain current (ID) or threshold voltage (VT) levels, digital-to-analog (DAC) function that receives and converts digital signals from external devices, column multiplexor (mux) function that is configured to select and combine the analog value read from the NVM cells, and analog-to-digital (ADC) function that is configured to convert analog results of the column mux function to digital values and output the digital values.