Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
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Application No.: US16697955Application Date: 2019-11-27
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Publication No.: US11018019B2Publication Date: 2021-05-25
- Inventor: Che-Cheng Chang , Chih-Han Lin , Horng-Huei Tseng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L27/088 ; H01L27/02 ; H01L29/08 ; H01L21/768

Abstract:
A semiconductor structure includes a substrate, at least one first gate structure, at least one first spacer, at least one source drain structure, at least one conductive plug, and at least one protection layer. The first gate structure is present on the substrate. The first spacer is present on at least one sidewall of the first gate structure. The source drain structure is present adjacent to the first spacer. The conductive plug is electrically connected to the source drain structure. The protection layer is present between the conductive plug and the spacer.
Public/Granted literature
- US20200098585A1 Semiconductor Structure and Manufacturing Method Thereof Public/Granted day:2020-03-26
Information query
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