Invention Grant
- Patent Title: Integrated circuit package and method of forming same
-
Application No.: US16568615Application Date: 2019-09-12
-
Publication No.: US11018066B2Publication Date: 2021-05-25
- Inventor: Hsien-Wei Chen , Ming-Fa Chen , Chen-Hua Yu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/28
- IPC: H01L23/28 ; H01L25/00 ; H01L23/367 ; H01L25/065

Abstract:
A package and a method of forming the same are provided. The package includes: a die stack bonded to a carrier, the die stack including a first integrated circuit die, the first integrated circuit die being a farthest integrated circuit die of the die stack from the carrier, a front side of the first integrated circuit die facing the carrier; a die structure bonded to the die stack, the die structure including a second integrated circuit die, a backside of the first integrated circuit die being in physical contact with a backside of the second integrated circuit die, the backside of the first integrated circuit die being opposite the front side of the first integrated circuit die; a heat dissipation structure bonded to the die structure adjacent the die stack; and an encapsulant extending along sidewalls of the die stack and sidewalls of the heat dissipation structure.
Public/Granted literature
- US20200006173A1 Integrated Circuit Package and Method of Forming Same Public/Granted day:2020-01-02
Information query
IPC分类: