Invention Grant
- Patent Title: Circuit that changes voltage of back electrode of transistor based on error condition
-
Application No.: US16125921Application Date: 2018-09-10
-
Publication No.: US11018129B2Publication Date: 2021-05-25
- Inventor: Jaume Roig-Guitart , Johan Camiel Julia Janssens
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agency: Brake Hughes Bellermann LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/06 ; H01L29/778 ; H01L29/20

Abstract:
A circuit can comprise a transistor, a sensor, and a switch. The transistor can include a drain electrode, a gate electrode, a source electrode, and a back electrode. The sensor can be configured to detect an error condition in the transistor. The switch can be configured to change a voltage at the back electrode in response to the sensor detecting the error condition in the transistor, the change of the voltage at the back electrode reducing current flow between the drain electrode and the source electrode.
Public/Granted literature
- US20200083214A1 CIRCUIT THAT CHANGES VOLTAGE OF BACK ELECTRODE OF TRANSISTOR BASED ON ERROR CONDITION Public/Granted day:2020-03-12
Information query
IPC分类: