Invention Grant
- Patent Title: Semiconductor device and fabricating method thereof
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Application No.: US16037467Application Date: 2018-07-17
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Publication No.: US11018131B2Publication Date: 2021-05-25
- Inventor: Cheng-Chien Huang , Chi-Wen Liu , Horng-Huei Tseng , Tsung-Yu Chiang
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L29/78 ; H01L29/06 ; H01L49/02 ; H01L23/528 ; H01L29/423 ; H01L29/66 ; H01L21/306 ; H01L21/762 ; H01L21/8234 ; H01L21/8238 ; H01L27/088
Abstract:
A semiconductor device includes a FinFET component, a plurality of patterned dummy semiconductor fins arranged aside a plurality of fins of the FinFET component, an isolation structure formed on the patterned dummy semiconductor fins, and a tuning component formed on the patterned dummy semiconductor fins and electrically connected to the FinFET component. A height of the patterned dummy semiconductor fins is shorter than that of the fins of the FinFET component.
Public/Granted literature
- US20180342503A1 Semiconductor Device and Fabricating Method Thereof Public/Granted day:2018-11-29
Information query
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