Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US16397005Application Date: 2019-04-29
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Publication No.: US11018226B2Publication Date: 2021-05-25
- Inventor: Aryan Afzalian
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/08 ; H01L29/66 ; H01L29/78 ; H01L29/423
Abstract:
A semiconductor device includes a source region, a drain region, a core channel region, and a barrier layer. The core channel region is between the source region and the drain region. The barrier layer is between the core channel region and the drain region. The barrier layer is a graded doped barrier layer.
Public/Granted literature
- US20200058738A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2020-02-20
Information query
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