Invention Grant
- Patent Title: Structure, method for manufacturing same, semiconductor element, and electronic circuit
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Application No.: US16341055Application Date: 2017-10-11
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Publication No.: US11018238B2Publication Date: 2021-05-25
- Inventor: Yuki Tsuruma , Emi Kawashima , Yoshikazu Nagasaki , Takashi Sekiya , Yoshihiro Ueoka
- Applicant: Idemitsu Kosan Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee: Idemitsu Kosan Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JPJP2016-200448 20161011
- International Application: PCT/JP2017/036802 WO 20171011
- International Announcement: WO2018/070417 WO 20180419
- Main IPC: H01L29/47
- IPC: H01L29/47 ; H01L29/78 ; H01L27/146 ; H01L31/108 ; H01L29/872 ; H01L31/07 ; H01L29/812 ; H01L31/10 ; H01L29/24 ; H01L29/786
Abstract:
A structure including a metal oxide semiconductor layer and a noble metal oxide layer, wherein the metal oxide semiconductor layer and the noble metal oxide layer are adjacent to each other, and a film thickness of the noble metal oxide layer is more than 10 nm.
Public/Granted literature
- US20190237556A1 STRUCTURE, METHOD FOR MANUFACTURING SAME, SEMICONDUCTOR ELEMENT, AND ELECTRONIC CIRCUIT Public/Granted day:2019-08-01
Information query
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