Invention Grant
- Patent Title: High-output power quarter-wavelength shifted distributed feedback laser diode
-
Application No.: US16561420Application Date: 2019-09-05
-
Publication No.: US11018475B2Publication Date: 2021-05-25
- Inventor: Namje Kim , O-Kyun Kwon , Miran Park , Tae-Soo Kim , Shinmo An , Won Seok Han
- Applicant: Electronics and Telecommunications Research Institute
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Rabin & Berdo, P.C.
- Priority: KR10-2018-0171305 20181227,KR10-2019-0080136 20190703
- Main IPC: H01S5/12
- IPC: H01S5/12 ; H01S5/028 ; H01S5/042 ; H01S5/026 ; H01S5/024

Abstract:
Provided is a quarter-wavelength shifted distributed feedback laser diode. The laser diode includes a substrate having a laser diode section and a phase adjustment section, a waveguide layer on the substrate, a clad layer on the waveguide layer, a grating disposed in the clad layer in the laser diode section, an anti-reflection coating disposed on one side walls, of the substrate, the waveguide layer, and the clad layer, adjacent to the laser diode section, and a high reflection coating disposed on the other side walls, of the substrate, the waveguide layer, and the clad layer, adjacent to the phase adjustment section.
Public/Granted literature
- US20200212652A1 HIGH-OUTPUT POWER QUARTER-WAVELENGTH SHIFTED DISTRIBUTED FEEDBACK LASER DIODE Public/Granted day:2020-07-02
Information query