- Patent Title: Photoresist bridging defect removal by reverse tone weak developer
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Application No.: US15440198Application Date: 2017-02-23
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Publication No.: US11022890B2Publication Date: 2021-06-01
- Inventor: Zhenxing Bi , Karen E. Petrillo , Nicole A. Saulnier , Hao Tang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: G06F7/32
- IPC: G06F7/32 ; G03F7/32 ; G03F7/40
Abstract:
A method for removing photoresist bridging defects includes coating a photoresist layer over a dielectric layer formed over a substrate, applying a first developer that results in formation of one or more photoresist bridging defects, and applying a second developer to remove the one or more photoresist bridging defects. The first developer is an aqueous base developer and the second developer is a reverse tone weak developer (RTWD), the RTWD being a mixture of a first (good) solvent and a second (bad) solvent for the photoresist.
Public/Granted literature
- US20180239253A1 PHOTORESIST BRIDGING DEFECT REMOVAL BY REVERSE TONE WEAK DEVELOPER Public/Granted day:2018-08-23
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