Invention Grant
- Patent Title: Two-dimensional materials integrated with multiferroic layers
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Application No.: US15819929Application Date: 2017-11-21
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Publication No.: US11024447B2Publication Date: 2021-06-01
- Inventor: Berend T. Jonker
- Applicant: The Government of the United States of America, as represented by the Secretary of the Navy
- Applicant Address: US VA Arlington
- Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
- Current Assignee: The Government of the United States of America, as represented by the Secretary of the Navy
- Current Assignee Address: US VA Arlington
- Agency: US Naval Research Laboratory
- Main IPC: H01F1/00
- IPC: H01F1/00 ; H01L29/66 ; H01L29/16 ; H01L29/24 ; H01L29/778 ; G01N27/414 ; H01L29/78 ; H01F10/193 ; H01F10/32 ; H01L29/739

Abstract:
The invention relates to heterostructures including a layer of a two-dimensional material placed on a multiferroic layer. An ordered array of differing polarization domains in the multiferroic layer produces corresponding domains having differing properties in the two-dimensional material. When the multiferroic layer is ferroelectric, the ferroelectric polarization domains in the layer produce local electric fields that penetrate the two-dimensional material. The local electric fields can influence properties of the two-dimensional material, including carrier density, transport properties, optical properties, surface chemistry, piezoelectric-induced strain, magnetic properties, and interlayer spacing. Methods for producing the heterostructures are provided. Devices incorporating the heterostructures are also provided, including tunable sensors, optical emitters, and programmable logic gates.
Public/Granted literature
- US20180144849A1 TWO-DIMENSIONAL MATERIALS INTEGRATED WITH MULTIFERROIC LAYERS Public/Granted day:2018-05-24
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