Invention Grant
- Patent Title: Semiconductor packages and methods of manufacturing the same
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Application No.: US16283836Application Date: 2019-02-25
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Publication No.: US11024581B2Publication Date: 2021-06-01
- Inventor: Yi-Wen Wu , Hung-Jui Kuo , Ming-Che Ho
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: JCIPRNET
- Main IPC: H01L23/532
- IPC: H01L23/532 ; H01L23/31 ; H01L23/522 ; H01L23/00 ; H01L21/768

Abstract:
Semiconductor packages and methods of forming the same are disclosed. One of the semiconductor packages includes a first dielectric layer, a first conductive pattern and a barrier layer. The first conductive pattern is disposed in a second dielectric layer over the first dielectric layer. The barrier layer is disposed at an interface between the first conductive pattern and the second dielectric layer and an interface between the first dielectric layer and the second dielectric layer.
Public/Granted literature
- US20200273805A1 SEMICONDUCTOR PACKAGES AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2020-08-27
Information query
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