Invention Grant
- Patent Title: Integrated circuit having angled conductive feature
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Application No.: US16722324Application Date: 2019-12-20
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Publication No.: US11024622B2Publication Date: 2021-06-01
- Inventor: Tung-Heng Hsieh , Hui-Zhong Zhuang , Chung-Te Lin , Sheng-Hsiung Wang , Ting-Wei Chiang , Li-Chun Tien
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L27/02
- IPC: H01L27/02 ; G06F30/39 ; G06F30/392 ; G06F30/398 ; H01L23/528 ; H01L27/092

Abstract:
An integrated circuit includes a plurality of gate electrode structures extending along a first direction and having a predetermined spatial resolution measurable along a second direction orthogonal to the first direction. The plurality of gate electrode structures includes a first gate electrode structure having a first portion and a second portion separated in the first direction, and a second gate electrode structure having a third portion and a fourth portion separated in the first direction. The integrated circuit further includes a conductive feature including a first section electrically connected to the second portion, wherein the first section extends in the second direction, a second section electrically connected to the third portion, wherein the second section extends in the second direction, and a third section electrically connecting the first section and the second section, the third section extends in a third direction angled with respect to the first and second directions.
Information query
IPC分类: