Invention Grant
- Patent Title: Ferroelectric memory devices including a stack of ferroelectric and antiferroelectric layers and method of making the same
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Application No.: US16743436Application Date: 2020-01-15
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Publication No.: US11024648B2Publication Date: 2021-06-01
- Inventor: Rahul Sharangpani , Adarsh Rajashekhar , Raghuveer S. Makala , Yanli Zhang , Seung-Yeul Yang , Fei Zhou
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L27/11597
- IPC: H01L27/11597 ; G11C11/22 ; H01L27/11587 ; H01L27/1159 ; H01L27/11582 ; H01L27/11524 ; H01L27/11556 ; H01L27/11565 ; H01L27/1157 ; H01L27/11519
Abstract:
A ferroelectric memory device includes a semiconductor channel, a gate electrode, and a ferroelectric memory element located between the semiconductor channel and the gate electrode. The ferroelectric memory element includes at least one ferroelectric material portion and at least one antiferroelectric material portion.
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