Invention Grant
- Patent Title: Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
-
Application No.: US16575022Application Date: 2019-09-18
-
Publication No.: US11024660B2Publication Date: 2021-06-01
- Inventor: Hideaki Togashi , Naoyuki Sato
- Applicant: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Applicant Address: JP Kanagawa
- Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
- Current Assignee Address: JP Kanagawa
- Agency: Sheridan Ross P.C.
- Priority: JP2012-146499 20120629
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H04N5/378 ; H04N5/361
Abstract:
A solid-state imaging device according to the present disclosure includes: a semiconductor base; a photoelectric conversion element provided in the semiconductor base; a photoelectric conversion film arranged on a light receiving surface side of the semiconductor base; a contact section to which a signal charge generated in the photoelectric conversion film is read, the contact section being provided in the semiconductor base; a first film member covering the photoelectric conversion element; and a second film member provided on the contact section.
Public/Granted literature
- US20200013815A1 SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS Public/Granted day:2020-01-09
Information query
IPC分类:
