Invention Grant
- Patent Title: Metal-insulator-semiconductor-insulator-metal (MISIM) device, method of operation, and memory device including the same
-
Application No.: US16725516Application Date: 2019-12-23
-
Publication No.: US11024674B2Publication Date: 2021-06-01
- Inventor: Jenn-Gwo Hwu , Hao-Hsiung Lin , Chang-Feng Yan , Samuel C. Pan
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. , NATIONAL TAIWAN UNIVERSITY
- Applicant Address: TW Hsinchu; TW Taipei
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.,NATIONAL TAIWAN UNIVERSITY
- Current Assignee Address: TW Hsinchu; TW Taipei
- Agency: McDermott Will & Emery LLP
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L27/26 ; G11C11/34 ; H01L47/02 ; G11C11/56 ; H01L29/417 ; G11C13/00 ; H01L29/88 ; H01L27/105
Abstract:
A metal-insulator-semiconductor-insulator-metal (MISIM) device includes a semiconductor layer, an insulating layer disposed over an upper surface of the semiconductor layer, a back electrode disposed over a lower surface of the semiconductor layer opposing the upper surface, and first and second electrodes disposed over the insulating layer and spaced-apart from each other.
Information query
