Invention Grant
- Patent Title: Skyrmion diode and method of manufacturing the same
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Application No.: US16685852Application Date: 2019-11-15
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Publication No.: US11024726B2Publication Date: 2021-06-01
- Inventor: Ki Suk Lee , Dae Han Jeong , Hee Sung Han , Nam Kyu Kim
- Applicant: UNIST (Ulsan National Institute of Science and Technology)
- Applicant Address: KR Ulsan
- Assignee: UNIST (Ulsan National Institute of Science and Technology)
- Current Assignee: UNIST (Ulsan National Institute of Science and Technology)
- Current Assignee Address: KR Ulsan
- Agency: Fenwick & West LLP
- Priority: KR10-2016-0026930 20160307
- Main IPC: H01L29/66
- IPC: H01L29/66 ; G11C11/16 ; H01L43/00 ; H01L29/30 ; H01L29/82

Abstract:
The present disclosure provides a skyrmion diode using skyrmions as information carriers. The skyrmion diode includes a magnetic body and a conductive body. The magnetic body has a skyrmion which is used as information carrier. The conductive body is disposed on or under the magnetic body. The conductive body includes a Dzyaloshinskii-Moriya interaction (DMI) region and a defect region. The DMI region is provided to induce DMI in a region of the magnetic body corresponding to the DMI region by the spin-orbit coupling of the conductive body and magnetic moments of the magnetic body. The defect region is provided to prevent the DMI from being induced in a region of the magnetic body corresponding to the defect region.
Information query
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