Invention Grant
- Patent Title: Sensing device
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Application No.: US15826484Application Date: 2017-11-29
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Publication No.: US11026026B2Publication Date: 2021-06-01
- Inventor: Ssu-Che Yang , Wen-Chi Lin , Keng-Nan Chen
- Applicant: SILICON INTEGRATED SYSTEMS CORP.
- Applicant Address: TW Hsinchu
- Assignee: SILICON INTEGRATED SYSTEMS CORP.
- Current Assignee: SILICON INTEGRATED SYSTEMS CORP.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Priority: TW105140008 20161202
- Main IPC: H04R3/00
- IPC: H04R3/00 ; H04R19/00 ; H04R19/04

Abstract:
A sensing device comprises a charge pump, a MEMS sensor, a source follower and a PGA. The charge pump is configured to provide a pump voltage. The MEMS sensor is electrically connected to the charge pump and configured to generate an input voltage according to environment variations. The source follower is electrically connected to the MEMS sensor and configured to generate a followed reference voltage according to the pump voltage and to generate a followed input voltage according to the input voltage. The PGA has an input end of the PGA electrically connected to the source follower and is configured to generate two-ended differential output voltages outputted through a first output end and a second output end according to a difference between the followed reference voltage and the followed input voltage.
Public/Granted literature
- US20180160233A1 SENSING DEVICE Public/Granted day:2018-06-07
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