Invention Grant
- Patent Title: Single crystal production apparatus and single crystal production method
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Application No.: US16323759Application Date: 2017-08-08
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Publication No.: US11028497B2Publication Date: 2021-06-08
- Inventor: Shin Akutsu
- Applicant: Shin Akutsu
- Applicant Address: JP Kodaira
- Assignee: Shin Akutsu
- Current Assignee: Shin Akutsu
- Current Assignee Address: JP Kodaira
- Agency: McGinn P.P. Law Group, PLLC.
- Priority: JPJP2016-155658 20160808
- International Application: PCT/JP2017/028715 WO 20170808
- International Announcement: WO2018/030383 WO 20180215
- Main IPC: C30B13/24
- IPC: C30B13/24 ; C30B13/30
Abstract:
A single crystal production apparatus that is designed to produce a single crystal by cooling a melting zone formed by a heating part including an infrared generation part and a reflection part, wherein: the reflection part includes a spheroidal mirror and a concave spherical mirror; the infrared generation part is disposed at one focal point of the spheroidal mirror; an opening is formed in the spheroidal mirror on the side of the other focal point of the spheroidal mirror; and the one focal point and the spherical center of the concave spherical mirror fall on the same location.
Public/Granted literature
- US20190177874A1 SINGLE CRYSTAL PRODUCTION APPARATUS AND SINGLE CRYSTAL PRODUCTION METHOD Public/Granted day:2019-06-13
Information query
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