A single crystal pulling apparatus including a dopant supplying means which includes: a charging device provided outside a chamber for storing a dopant and charging the dopant into the chamber; a sublimation room provided inside the chamber for holding and sublimating the dopant charged from the charging device; a carrier gas-introducing device for introducing a carrier gas into the sublimation room; and a blowing device for blowing the dopant sublimated in the sublimation room together with the carrier gas onto a surface of a raw-material melt. The blowing device includes a tube connected to the sublimation room and blowing ports such that the sublimated dopant is scattered from the blowing ports via the tube and blown onto the surface of the raw-material melt. This provides a single crystal pulling apparatus capable of efficient doping with a sublimable dopant within the shortest possible time.