Invention Grant
- Patent Title: Low noise bandgap reference apparatus
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Application No.: US15721521Application Date: 2017-09-29
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Publication No.: US11029718B2Publication Date: 2021-06-08
- Inventor: Matthias Eberlein
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Green, Howard & Mughal LLP
- Main IPC: G05F3/30
- IPC: G05F3/30 ; G05F3/22 ; G05F3/26

Abstract:
An apparatus is provided which includes: a first supply node; a second supply node; a first transistor coupled to the first supply node, the first transistor is to provide a first current which is complementary to absolute temperature (CTAT); a second transistor coupled to the first supply node, the second transistor is to provide a second current which is proportional to absolute temperature (PTAT); a resistive device coupled in series at a node with the first and second transistors, and coupled to the second supply node, wherein the node is to sum the CTAT and the PTAT currents.
Public/Granted literature
- US20190101948A1 LOW NOISE BANDGAP REFERENCE APPARATUS Public/Granted day:2019-04-04
Information query
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