Invention Grant
- Patent Title: Power conversion device and semiconductor device
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Application No.: US16189089Application Date: 2018-11-13
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Publication No.: US11029740B2Publication Date: 2021-06-08
- Inventor: Shunichi Kaeriyama , Norio Kido
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JPJP2017-254366 20171228
- Main IPC: G06F1/28
- IPC: G06F1/28 ; H02P29/68 ; G01K1/08 ; H02M1/32 ; H03K17/082 ; G01K7/01 ; H03K17/08

Abstract:
There is to provide a power conversion device capable of estimating a junction temperature of a power transistor at a high accuracy. The control device includes a temperature estimation unit and controls the on and off of the power transistor through a driver. The voltage detection circuit detects the inter-terminal voltage of a source and drain terminals during the on-period of the power transistor. The temperature estimation unit previously holds the correlation information between the inter-terminal voltage and inter-terminal current of the source and drain terminals and the junction temperature, and estimates the junction temperature, based on the inter-terminal voltage detected by the voltage detection circuit, the known inter-terminal current, and the correlation information.
Public/Granted literature
- US20190204889A1 POWER CONVERSION DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2019-07-04
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