Invention Grant
- Patent Title: Semiconductor bonding structure and method of manufacturing the same
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Application No.: US16528347Application Date: 2019-07-31
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Publication No.: US11031361B2Publication Date: 2021-06-08
- Inventor: Wen-Long Lu
- Applicant: Advanced Semiconductor Engineering, Inc.
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee: Advanced Semiconductor Engineering, Inc.
- Current Assignee Address: TW Kaohsiung
- Agency: Foley & Lardner LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L25/065 ; H01L25/00 ; H01L21/48 ; H01L23/31 ; H01L23/498

Abstract:
A semiconductor structure and a method of manufacturing the same are provided. The semiconductor structure includes a first semiconductor element and a first bonding structure. The first semiconductor element has a first element top surface and a first element bottom surface opposite to the element top surface. The first bonding structure is disposed adjacent to the element top surface of the first semiconductor element and includes a first electrical connector, a first insulation layer surrounding the first electrical connector, and a first metal layer surrounding the first insulation layer.
Public/Granted literature
- US20210035933A1 SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2021-02-04
Information query
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