Invention Grant
- Patent Title: Multi-layer sealing film for high seal yield
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Application No.: US15930605Application Date: 2020-05-13
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Publication No.: US11034578B2Publication Date: 2021-06-15
- Inventor: Chih-Chien Yang , Ming-Lun Shih , Ren-Dou Lee , Jen-Hao Liu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: B81B7/00
- IPC: B81B7/00 ; B81C1/00 ; G01L9/00

Abstract:
A multi-layer sealing film for high seal yield is provided. In some embodiments, a substrate comprises a vent opening extending through the substrate, from an upper side of the substrate to a lower side of the substrate. The upper side of the substrate has a first pressure, and the lower side of the substrate has a second pressure different than the first pressure. The multi-layer sealing film covers and seals the vent opening to prevent the first pressure from equalizing with the second pressure through the vent opening. Further, the multi-layer sealing film comprises a pair of metal layers and a barrier layer sandwiched between metal layers. Also provided is a microelectromechanical systems (MEMS) package comprising the multilayer sealing film, and a method for manufacturing the multi-layer sealing film.
Public/Granted literature
- US20200270121A1 MULTI-LAYER SEALING FILM FOR HIGH SEAL YIELD Public/Granted day:2020-08-27
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