- Patent Title: Group 13 nitride layer, composite substrate, and functional element
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Application No.: US16385380Application Date: 2019-04-16
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Publication No.: US11035055B2Publication Date: 2021-06-15
- Inventor: Yoshinori Isoda , Suguru Noguchi , Tetsuya Uchikawa , Takayuki Hirao , Takanao Shimodaira , Katsuhiro Imai
- Applicant: NGK INSULATORS, LTD.
- Applicant Address: JP Nagoya
- Assignee: NGK INSULATORS, LTD.
- Current Assignee: NGK INSULATORS, LTD.
- Current Assignee Address: JP Nagoya
- Agency: Burr & Brown, PLLC
- Priority: JPJP2016-211564 20161028
- Main IPC: C30B29/40
- IPC: C30B29/40 ; H01L33/00 ; H01L33/32 ; C30B29/38 ; H01L21/205 ; C30B25/02
Abstract:
It is provided a layer of a nitride of a group 13 element having a first main face and second main face. The layer of the nitride of the group 13 element includes a first void-depleted layer provided on the side of the first main face, a second void-depleted layer provided on the side of the second main face, and the void-distributed layer provided between the first void-depleted layer and second void-depleted layer.
Public/Granted literature
- US20190242029A1 GROUP 13 NITRIDE LAYER, COMPOSITE SUBSTRATE, AND FUNCTIONAL ELEMENT Public/Granted day:2019-08-08
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