Invention Grant
- Patent Title: Low power mode for a memory device
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Application No.: US16506714Application Date: 2019-07-09
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Publication No.: US11036432B2Publication Date: 2021-06-15
- Inventor: Yuan He
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G06F3/06 ; G11C7/22 ; G06F13/16

Abstract:
Methods, systems, and devices for low power mode for a memory device are described. A memory device may identify a pattern of data configured to be stored in an array of memory cells and determine if the pattern of data satisfies a criterion. The pattern of data may satisfy the criterion if each of the bits of data include a same logic value. If the pattern of data satisfies the criterion, the memory device may disable a driver of an internal bus of the memory device if the data satisfies the criterion, isolate a data line from the internal bus, or couple the data line with a voltage source, or a combination thereof. The memory device may further disable a signal of a clock tree based on identifying that the pattern of data satisfies the criterion.
Public/Granted literature
- US20210011655A1 LOW POWER MODE FOR A MEMORY DEVICE Public/Granted day:2021-01-14
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