Invention Grant
- Patent Title: Method of classifying defects in a semiconductor specimen and system thereof
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Application No.: US15719447Application Date: 2017-09-28
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Publication No.: US11037286B2Publication Date: 2021-06-15
- Inventor: Assaf Asbag , Ohad Shaubi , Kirill Savchenko , Shiran Gan-Or , Boaz Cohen , Zeev Zohar
- Applicant: Applied Materials Israel Ltd.
- Applicant Address: IL Rehovot
- Assignee: Applied Materials Israel Ltd.
- Current Assignee: Applied Materials Israel Ltd.
- Current Assignee Address: IL Rehovot
- Agency: Lowenstein Sandler LLP
- Main IPC: G06K9/00
- IPC: G06K9/00 ; G06T7/00 ; G06K9/62 ; G06K9/03

Abstract:
There are provided a classifier and a method of classifying defects in a semiconductor specimen. The classifier enables assigning each class to a classification group among three or more classification groups with different priorities. Classifier further enables setting purity, accuracy and/or extraction requirements separately for each class, and optimizing the classification results in accordance with per-class requirements. During training, the classifier is configured to generate a classification rule enabling the highest possible contribution of automated classification while meeting per-class quality requirements defined for each class.
Public/Granted literature
- US20190096053A1 METHOD OF CLASSIFYING DEFECTS IN A SEMICONDUCTOR SPECIMEN AND SYSTEM THEREOF Public/Granted day:2019-03-28
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