Invention Grant
- Patent Title: Imprint-free write driver for ferroelectric memory
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Application No.: US16615780Application Date: 2018-07-23
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Publication No.: US11037614B2Publication Date: 2021-06-15
- Inventor: Huichu Liu , Sasikanth Manipatruni , Ian A. Young , Tanay Karnik , Daniel H. Morris , Kaushik Vaidyanathan
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Green, Howard & Mughal LLP
- International Application: PCT/US2018/043236 WO 20180723
- International Announcement: WO2019/023101 WO 20190131
- Main IPC: G11C11/22
- IPC: G11C11/22 ; H01L27/11507 ; H01L49/02

Abstract:
Described is an apparatus to reduce or eliminate imprint charge, wherein the apparatus which comprises: a source line; a bit-line; a memory bit-cell coupled to the source line and the bit-line; a first multiplexer coupled to the bit-line; a second multiplexer coupled to the source-line; a first driver coupled to the first multiplexer; a second driver coupled to the second multiplexer; and a current source coupled to the first and second drivers.
Public/Granted literature
- US20200098415A1 IMPRINT-FREE WRITE DRIVER FOR FERROELECTRIC MEMORY Public/Granted day:2020-03-26
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