Invention Grant
- Patent Title: Semiconductor memory device
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Application No.: US16597512Application Date: 2019-10-09
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Publication No.: US11037623B2Publication Date: 2021-06-15
- Inventor: Chang-Yong Ahn , Han-Suk Ko
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2019-0008122 20190122
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C29/38

Abstract:
A semiconductor memory device includes a memory cell array, a storage circuit suitable for storing pattern data, a data input circuit suitable for receiving normal write data from an external device, a comparison circuit suitable for comparing the pattern data with the normal write data based on a pre-read control signal, and generating a comparison signal corresponding to the comparison result, and a write circuit suitable for writing the pattern data to the memory cell array based on a pre-write control signal, and writing some of the normal write data to the memory cell array based on a normal write control signal and the comparison signal.
Public/Granted literature
- US20200234764A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2020-07-23
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