Invention Grant
- Patent Title: Memory system for improving memory reliability and memory management method for the same
-
Application No.: US16051796Application Date: 2018-08-01
-
Publication No.: US11037648B2Publication Date: 2021-06-15
- Inventor: Tae Sik Yun , Chun Seok Jeong
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon-si
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon-si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2017-0165333 20171204
- Main IPC: G06F11/27
- IPC: G06F11/27 ; G11C29/44 ; G11C29/42 ; G11C29/36 ; G06F11/263

Abstract:
A memory system and a method for operating the same, wherein the memory system includes a first memory and a second memory each configured to store data. The memory system further includes a test and repair circuit operationally connected to the first memory and to the second memory. The test and repair circuit is configured to receive a test initiation signal and perform, in response to receiving the test initiation signal, a test operation on at least one of the first memory and the second memory. The test and repair circuit is also configured to perform, based on a result of the test operation, a repair operation on the at least one of the first memory and the second memory.
Public/Granted literature
- US20190172547A1 MEMORY SYSTEM FOR IMPROVING MEMORY RELIABILITY AND MEMORY MANAGEMENT METHOD FOR THE SAME Public/Granted day:2019-06-06
Information query