There is provision of a method of controlling a plasma processing apparatus including a chamber in which a plasma is generated, a substrate holder, a radio frequency power supply configured to supply radio frequency electric power to the substrate holder, a matching device provided between the substrate holder and the radio frequency power supply. The method includes acquiring output impedance of the matching device in a state in which impedance matching is achieved; obtaining F-parameters indicating electrical characteristics of the chamber; calculating a degree of high harmonic component generation; and controlling the output impedance of the matching device based on the degree of high harmonic component generation.