Invention Grant
- Patent Title: Field effect transistor using transition metal dichalcogenide and a method for forming the same
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Application No.: US16415463Application Date: 2019-05-17
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Publication No.: US11037783B2Publication Date: 2021-06-15
- Inventor: Ming-Yang Li , Lain-Jong Li , Chih-Piao Chuu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/10 ; H01L29/786 ; H01L29/24 ; H01L29/66 ; H01L29/778 ; H01L21/8234
Abstract:
In a method of forming a two-dimensional material layer, a nucleation pattern is formed over a substrate, and a transition metal dichalcogenide (TMD) layer is formed such that the TMD layer laterally grows from the nucleation pattern. In one or more of the foregoing and following embodiments, the TMD layer is single crystalline.
Public/Granted literature
- US20200098564A1 FIELD EFFECT TRANSISTOR USING TRANSITION METAL DICHALCOGENIDE AND A METHOD FOR FORMING THE SAME Public/Granted day:2020-03-26
Information query
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