Invention Grant
- Patent Title: Semiconductor structure etching solution and method for fabricating a semiconductor structure using the same etching solution
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Application No.: US16372096Application Date: 2019-04-01
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Publication No.: US11037792B2Publication Date: 2021-06-15
- Inventor: Chung-Chieh Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/308 ; H01L21/3063

Abstract:
The present disclosure provides a semiconductor structure etching solution, including an etchant, an ionic strength enhancer having an ionic strength greater than 10−3 M in the semiconductor structure etching solution, and a solvent having a dielectric constant lower than a dielectric constant of water.
Information query
IPC分类: