Invention Grant
- Patent Title: Package substrate having copper alloy sputter seed layer and high density interconnects
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Application No.: US16347207Application Date: 2016-12-28
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Publication No.: US11037802B2Publication Date: 2021-06-15
- Inventor: Robert Alan May , Kristof Kuwawi Darmawikarta , Sri Ranga Sai Boyapati , Sandeep Gaan , Srinivas V. Pietambaram
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Patent Capital Group
- International Application: PCT/US2016/068773 WO 20161228
- International Announcement: WO2018/125066 WO 20180705
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L21/48 ; H01L23/498 ; H05K3/42 ; H05K3/38

Abstract:
Integrated circuit (IC) package substrates having high density interconnects with a sputter seed layer containing a copper alloy, as well as related structures, devices, and methods, are disclosed herein. For example, in some embodiments, a package substrate may include a first dielectric layer, a sputter seed layer disposed on the first dielectric layer, wherein the seed layer includes a copper alloy, a patterned conductive layer disposed on the seed layer, and a second dielectric layer over the patterned conductive layer.
Public/Granted literature
- US20190259631A1 PACKAGE SUBSTRATE HAVING COPPER ALLOY SPUTTER SEED LAYER AND HIGH DENSITY INTERCONNECTS Public/Granted day:2019-08-22
Information query
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