Invention Grant
- Patent Title: Fabrication method of semiconductor device with spacer trimming process
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Application No.: US16455762Application Date: 2019-06-28
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Publication No.: US11037833B2Publication Date: 2021-06-15
- Inventor: Yao-Hsien Chung , Hao-Hsuan Chang , Ting-An Chien , Bin-Siang Tsai
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L21/82
- IPC: H01L21/82 ; H01L21/8234 ; H01L29/78 ; H01L29/66 ; H01L29/423
Abstract:
A method for forming a semiconductor device is provided. A dielectric layer is formed on a substrate. First and second gate trenches are formed in the dielectric layer. First and second spacers are disposed in the first and the second gate trenches, respectively. A patterned photoresist is formed on the dielectric layer. The patterned photoresist masks the first region and exposes the second region. Multiple cycles of spacer trimming process are performed to trim a sidewall profile of the second spacer. Each cycle comprises a step of oxygen stripping and a successive step of chemical oxide removal. The patterned photoresist is then removed to reveal the first region.
Information query
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