Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15914628Application Date: 2018-03-07
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Publication No.: US11037863B2Publication Date: 2021-06-15
- Inventor: Hidetoshi Kuraya , Satoshi Hattori , Kyo Tanabiki
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Minato-ku; JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Minato-ku; JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JPJP2017-215465 20171108
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L23/495 ; H01L23/00 ; H01L21/48 ; H01L23/31 ; H01L23/29

Abstract:
According to one embodiment, a semiconductor device includes a semiconductor chip, first and second conductive members, a first connection member, and a resin portion. The first conductive member includes first and second portions. The second portion is electrically connected to the semiconductor chip. A direction from the semiconductor chip toward the second portion is aligned with a first direction. A direction from the second portion toward the first portion is aligned with a second direction crossing the first direction. The second conductive member includes a third portion. The first connection member is provided between the first and third portion. The first connection member is conductive. The resin portion includes a first partial region. The first partial region is provided around the first and third portions, and the first connection member. The first portion has a first surface opposing the first connection member and including a recess and a protrusion.
Public/Granted literature
- US20190139866A1 SEMICONDUCTOR DEVICE Public/Granted day:2019-05-09
Information query
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