Invention Grant
- Patent Title: Semiconductor with external electrode
-
Application No.: US16808086Application Date: 2020-03-03
-
Publication No.: US11037865B2Publication Date: 2021-06-15
- Inventor: Koshun Saito , Katsuhiro Iwai
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2016-135582 20160708,JP2016-135583 20160708,JP2017-127342 20170629
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/31 ; H01L23/00 ; H01L21/48 ; H01L21/56

Abstract:
An aspect of the present disclosure provides a method of manufacturing a semiconductor device. The method includes preparing a lead frame. The lead frame includes a first lead including a pad and a first terminal. The pad includes a pad main surface and a pad back surface that face opposite sides to each other in a first direction. The first terminal extends from the pad along a second direction that is perpendicular to the first direction. The method includes: preparing a first semiconductor element and a second semiconductor element, each of the first semiconductor element and the second semiconductor element having an element main surface and an element back surface that face opposite sides to each other; die bonding the element back surface of the first semiconductor element to the pad main surface by using a first solder; and die bonding the element back surface of the second semiconductor element to the pad main surface by using a second solder having a melting point lower than a melting point of the first solder, after die bonding the element back surface of the first semiconductor element to the pad main surface by using the first solder.
Information query
IPC分类: