Invention Grant
- Patent Title: Semiconductor device
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Application No.: US16553810Application Date: 2019-08-28
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Publication No.: US11037879B2Publication Date: 2021-06-15
- Inventor: Yasuo Otsuka
- Applicant: TOSHIBA MEMORY CORPORATION
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JPJP2019-046938 20190314
- Main IPC: H01L23/538
- IPC: H01L23/538 ; H01L23/66 ; H01L25/18 ; H01L25/065 ; H01L23/00

Abstract:
According to one embodiment, a semiconductor device includes a wiring board, a spacer board that is mounted on the wiring board and in which a power supply conductor layer and a ground conductor layer are provided, at least one first semiconductor chip that is mounted on the spacer board including a power supply layer electrically connected to the power supply conductor layer and a ground layer electrically connected to the ground conductor layer, and a second semiconductor chip that is mounted on the wiring board.
Public/Granted literature
- US20200294922A1 Semiconductor Device Public/Granted day:2020-09-17
Information query
IPC分类: